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 ML1350 Monolithic IF Amplifier
Legacy Device: Motorola MC1350
The ML1350 is an integrated circuit featuring wide range AGC for use as a linear IF amplifier in AM radio, shortwave, TV and instrumentation. * Power Gain: * * * * * * 50 dB Typ at 45 MHz 50 dB Typ at 58 MHz AGC Range: 60 dB Min, DC to 45 MHz Nearly Constant Input & Output Admittance over the Entire AGC Range Y21 Constant (-3.0 dB) to 90 MHz Low Reverse Transfer Admittance: << 1.0 mho Typical 12 V Operation, Single-Polarity Power Supply Operating Temperature Range TA = 0 to +75 C
8 1
P DIP = PP PLASTIC PACKAGE CASE 626
SO 8 = -5P PLASTIC PACKAGE CASE 751 (SO-8)
8 1
Note: See ML1490 Similar Function
MAXIMUM RATINGS (TA = +25C, unless otherwise noted.)
Rating Power Supply Voltage Output Supply Voltage AGC Supply Voltage Differential Input Voltage Power Dissipation (Package Limitation) Plastic Package Derate above 25C Operating Temperature Range Symbol V+ V1, V8 VAGC Vin PD 625 5.0 TA 0 to +75 mW mW/C C Value +18 +18 V+ 5.0 Unit Vdc Vdc Vdc Vdc
CROSS REFERENCE/ORDERING INFORMATION PACKAGE MOTOROLA LANSDALE P DIP 8 MC1350P ML1350PP SO 8 MC1350D ML1350-5P
Note: Lansdale lead free (Pb) product, as it becomes available, will be identified by a part number prefix change from ML to MLE.
Figure 1. Typical ML1350 Video IF Amplifier and MC1330 Low-Level Video Detector Circuit
0.002F 470 220 0.1F 68pF 4 45MHz Input 3 2 1 T1 50 ML1350 20pF MC1330AP 22 7 6 5 4 3.3k +18Vdc 18V Auxiliary Video Output 10V Primary Video and Sound Output 7.7V 3.9k 0 5 5.0k 6 0.002 F 7 0.002 F 8 12pF 8 3 33pF 2 1 AFT Output 3.9k L1 T1 AGC 5" 16 1" 5 6 Turns Turns 4 All windings #30 AWG tinned nylon acetate wire tuned with Carbonyl E or J slugs. 3" 16 10 Turns 3" 16
0.002F 0.001F
L1 wound with #26 AWG tinned nylon acetate wire tuned by distorting winding.
Page 1 of 6
www.lansdale.com
Issue A
ML1350
LANSDALE Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (V+ = +12 Vdc, TA = +25C, unless otherwise noted.)
Characteristics AGC Range, 45 MHz (5.0 V to 7.0 V) (Figure 1) Power Gain (Pin 5 grounded via a 5.1 k resistor) f = 58 MHz, BW = 4.5 MHz See Figure 6(a) f = 45 MHz, BW = 4.5 MHz See Figure 6(a), (b) f = 10.7 MHz, BW = 350 kHz See Figure 7 f = 455 kHz, BW = 20 kHz Maximum Differential Voltage Swing 0 dB AGC -30 dB AGC Output Stage Current (Pins 1 and 8) Total Supply Current (Pins 1, 2 and 8) Power Dissipation Ap - 46 - - VO - - I1 + I8 IS PD - - - 20 8.0 5.6 14 168 - - - 17 204 mA mAdc mW 48 50 58 62 - - - - Vpp Symbol Min 60 Typ 68 Max - Unit dB dB
DESIGN PARAMETERS, Typical Values (V+ = +12 Vdc, TA = +25C, unless otherwise noted.)
Frequency Parameter Single-Ended Input Admittance Input Admittance Variations with AGC (0 dB to 60 dB) Differential Output Admittance Output Admittance Variations with AGC (0 dB to 60 dB) Reverse Transfer Admittance (Magnitude) Forward Transfer Admittance Magnitude Angle (0 dB AGC) Angle (-30 dB AGC) Single-Ended Input Capacitance Differential Output Capacitance Symbol g11 b11 g11 b11 g22 b22 g22 b22 |y12| |y21| < y21 < y21 Cin CO 455 kHz 0.31 0.022 - - 4.0 3.0 - - < < 1.0 160 -5.0 -3.0 7.2 1.2 10.7 MHz 0.36 0.50 - - 4.4 110 - - < < 1.0 160 -20 -18 7.2 1.2 45 MHz 0.39 2.30 60 0 30 390 4.0 90 < < 1.0 200 -80 -69 7.4 1.3 58 MHz 0.5 2.75 - - 60 510 - - < < 1.0 180 -105 -90 7.6 1.6 Unit mmho mho mho mho mho mmho Degrees Degrees pF pF
Figure 2. Typical Gain Reduction
0 GAIN REDUCTION (dB) 20 40 60 (Figures 6 and 7) 80 4.0 IAGC = 0.2 mA 7.0 NOISE FIGURE (dB) IAGC = 0.1 mA 22 20 18 16 14 12 10 8.0 6.0 0
Figure 3. Noise Figure versus Gain Reduction
58 MHz 45 MHz (Figure 6)
5.0 6.0 VAGC, SUPPLY VOLTAGE (V)
10
20 GAIN REDUCTION (dB)
30
40
Page 2 of 6
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Issue A
ML1350
LANSDALE Semiconductor, Inc.
GENERAL OPERATING INFORMATION
The input amplifiers (Q1 and Q2) operate at constant emitter currents so that input impedance remains independent of AGC action. Input signals may be applied single-ended or differentially (for AC) with identical results. Terminals 4 and 6 may be driven from a transformer, but a DC path from either terminal to ground is not permitted.
Figure 4. Circuit Schematic
AGC Amplifier Section
1.47k 8 5.53k 470 Q4 Q5 2.0k 4 (-) Inputs Q1 6 (+) 5.0k 1.1k 1.1k 5.0k 5.6k 8.4k 1.9k 200 7 Gnd 66 Q2 1.4k Q7 Q8 45 2.8k 200 Q9 200 2.8k Q10 Q6 12.1 k 1(-) V+ 2 (+) V++ Output 5 470 Q3 AGC Input 70
AGC action occurs as a result of an increasing voltage on the base of Q4 and Q5 causing these transistors to conduct more heavily thereby shunting signal current from the interstage amplifiers Q3 and Q6. The output amplifiers are supplied from an active current source to maintain constant quiescent bias thereby holding output admittance nearly constant. Collector voltage for the output amplifier must be supplied through a center-tapped tuning coil to Pins 1 and 8. The 12 V supply (V+) at Pin 2 may be used for this purpose, but output admittance remains more nearly constant if a separate 15 V supply (V+ +) is used, because the base voltage on the output amplifier varies with AGC bias.
Figure 5. Frequency Response Curve (45 MHz and 58 MHz)
Scale: 1.0 MHz/cm Output Amplifier Section
Input Amplifier Section
Bias Supplies
Figure 6. Power Gain, AGC and Noise Figure Test Circuits
(a) 45 MHz and 58 MHz
0.001F Input RS = 50 0.001F LP LP LP Output T1 RL = 50 RS = 50 C1 4 3 2 1 RL = 50 Output 8 5.1k 5.1k VAGC * 0.001F 0.001F 5 6 7 8 VAGC 0.001F 0.001 0.001 C3 5.1k C2 +12V
(b) Alternate 45 MHz
Input
0.68H
.001 L1 0.1 0.33H ML1350
+12V
C2 0.001 F 4
1.5-20pF
C1
L1
3
2 ML1350
1
5
6
7
*Connect to ground for maximum power gain test. All power supply chokes (Lp), are self-resonant at input frequency. LP 20 k. See Figure 5 for Frequency Response Curve. L1 @ 45 MHz = 7 1/4 Turns on a 1/4" coil form L1 @ 58 MHz = 6 Turns on a 1/4" coil form T1 Primary Winding = 18 Turns on a 1/4" coil form, center-tapped, #25 AWG Secondary Winding = 2 Turns centered over Primary Winding @ 45 MHz = 1 Turn @ 58 MHz Slug = Carbonyl E or J
L1 C1 C2 C3
Ferrite Core 14 Turns 28 S.W.G. 5-25 pF 5-25 pF 5-25 pF
45 MHz L1 T1 C1 C2 0.4 H 1.3 H to 3.4 H Q 100 Q 100 @ 2.0 H 50 pF to 160 pF 8.0 pF to 60 pF 0.3 H 1.2 H to 3.8 H
58 MHz Q 100 Q 100 @ 2.0 H 8.0 pF to 60 pF 3.0 pF to 35 pF
Page 3 of 6
www.lansdale.com
Issue A
ML1350
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 7. Power Gain and AGC Test Circuit (455 kHz and 10.7 MHz)
Input RS = 50
Frequency
L1 12 V C3 4 3 2 MC1350 5.1k 5 6 C7 7 C6 8 1 C5 T1 Output RS = 50
Component C1 C2 C3 C4 C5 C8 C7 L1 T1
NOTES: NOTES: NOTES: NOTES: NOTES: NOTES: NOTES: NOTES: NOTES:
455 kHz - - 0.05 F 0.05 F 0.001 F 0.05 F 0.05 F - Note 1
10.7 MHz 80-450 pF 5.0-80 pF 0.001 F 0.05 F 36 pF 0.05 F 0.05 F 4.6 F Note 2
C2 C1
C4
VAGC * *Grounded for maximum power gain.
1. Primary: 120 H (center-tapped) 1. Qu = 140 at 455 kHz 1. Primary: Secondary turns ratio 13 2. Primary: 6.0 H 2. Primary winding = 24 turns #36 AWG 2. (close-wound on 1/4" dia. form) 2. Core = Carbonyl E or J 2. Secondary winding = 1-1/2 turns #36 AWG, 1/4" dia. 2. (wound over center-tap)
Figure 8. Single-Ended Input Admittance
5.0 4.0 g11 ,b11 (mmhos) 3.0 2.0 1.0 0 10 20 30 40 50 f, FREQUENCY (MHz) 70 100 b11 | Y 21 | (mmhos) 500 400 300 200 100 0 1.0
Figure 9. Forward Transfer Admittance
< Y21 (-30 dB gain) < Y21 (max gain) 0 -40 -80 -120 Y21 -160 -200 100 < Y 21 (DEGREES)
g11
2.0
3.0 5.0 10 20 f, FREQUENCY (MHz)
30
50
Figure 10. Differential Output Admittance
1.0 0.8 g 22 , b 22 (mmho) 0.6 0.4 0.2 g22 0 10 20 30 40 50 70 100 (Single-ended output admittance exhibits twice these values.) b22 DIFFERENTIAL OUTPUT VOLTAGE (V) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0
Figure 11. Differential Output Voltage
V + + = 14 V
V + + = 12 V
10
20
f, FREQUENCY (MHz)
30 40 50 GAIN REDUCTION (dB)
60
70
80
Page 4 of 6
www.lansdale.com
Issue A
ML1350
LANSDALE Semiconductor, Inc.
Figure 12.
Typical application of a AM Modulator using ML1350
V1 12V +V C4 .1uF
C1 220pF
L2 1uH
vcc rfout rfin gnd
RF input
V2 10V +V R3 10k 40% R1 5.1k
R2 P1 50
43
2
1
T1 U2 C5 47pF
C6 470pF
ML1350
rfin gnd rfout 5 6 7 8 a gc
RF out
P3
AGC MOD input
C7 1uF C2 P2 .1uF
C3 .1uF
Page 5 of 6
www.lansdale.com
Issue A
ML1350
LANSDALE Semiconductor, Inc.
OUTLINE DIMENSIONS
P DIP 8 = PP (ML1350PP) PLASTIC PACKAGE CASE 626-05 ISSUE K
8
5
-B-
1 4
NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. DIM A B C D F G H J K L M N MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC --- 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC --- 0.030 0.040
F
NOTE 2
-A- L
C -T-
SEATING PLANE
J N D K
M
M TA B
H
G 0.13 (0.005)
M M
-A-
8 5
SO 8 = -5P (ML1350-5P) PLASTIC PACKAGE CASE 751-05 (SO-8) ISSUE N
4X
-B-
1 4
P 0.25 (0.010)
M
B
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 5.80 0.25 6.20 0.50 INCHES MIN MAX 0.189 0.196 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.007 0.009 0.004 0.009 0.229 0.010 0.244 0.019
G C -T-
8X SEATING PLANE
R
X 45
F
D 0.25 (0.010)
M
K TB
M
S
J
A
S
Lansdale Semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Lansdale does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. "Typical" parameters which may be provided in Lansdale data sheets and/or specifications can vary in different applications, and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by the customer's technical experts. Lansdale Semiconductor is a registered trademark of Lansdale Semiconductor, Inc.
Page 6 of 6
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Issue A


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